Abstract
In this paper the simulation results of the spectral sensitivity characteristics of silicon p-i-n-photodiodes are presented. The analysis of the characteristics of the semiconductor material (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the characteristics of photosensitive structures in order to optimize them was carried out.
Cite
CITATION STYLE
Urchuk, S. U., Legotin, S. A., Osipov, U. V., Elnikov, D. S., Didenko, S. I., Astahov, V. P., … Kuzmina, K. A. (2015). Spectral sensitivity characteristics simulation for silicon p-i-n photodiode. In Journal of Physics: Conference Series (Vol. 643). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/643/1/012068
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
