Abstract
An inductively coupled, intense, pulsed RF plasma source deposited plasma-polymerized acetylene at a rate of 127 angstrom per discharge. The potassium bromide substrate was located 18-cm downstream from the RF coil. A puff valve admitted parent acetylene gas just before the transient RF current was applied. Fourier transform infrared (FTIR) spectra showed that carbon-to-carbon double bonds were formed. Scanning-electron-microscope images showed that the film thickness after 79 discharges was 1 μm. A photodiode showed substantial light emission for about 30 μs during each discharge.
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CITATION STYLE
Pedrow, P. D., Nasiruddin, A. M., & Mahalingam, R. (1990). Deposition of plasma-polymerized acetylene by an intense pulsed RF plasma source. IEEE Transactions on Plasma Science, 18(6), 945–947. https://doi.org/10.1109/27.61508
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