Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (Voc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.
Gao, C., Xu, M., Ng, B. K., Kang, L., Jiang, L., Lai, Y., & Liu, F. (2017). In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells. Materials Letters, 195, 186–189. https://doi.org/10.1016/j.matlet.2017.02.046