Skip to main content

In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells

17Citations
Citations of this article
13Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (Voc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells.

Cite

CITATION STYLE

APA

Gao, C., Xu, M., Ng, B. K., Kang, L., Jiang, L., Lai, Y., & Liu, F. (2017). In situ growth of Sb2S3 thin films by reactive sputtering on n-Si(100) substrates for top sub-cell of silicon based tandem solar cells. Materials Letters, 195, 186–189. https://doi.org/10.1016/j.matlet.2017.02.046

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free