Deposition of Cadmium doped Zinc Selenide Thin Films and its Characteristics

Abstract

Extensive research is being carried out by many researchers for the purpose of developing solar cells and photo-electrochemical cells with II-IV and II-IV-VI compounds. As an attempt to this, CdZnSe thin films with a varying concentration of Cadmium have been deposited on the glass micro slides by employing chemical bath deposition technique, which provides large area deposition for fabricating optoelectronic devices. The growth mechanism and chemical kinetics of these materials have been studied considering its elementary parameters such as basic constituents, molarities, pH of reaction mixture and deposition conditions like temperature time, rotations per minute etc. Composition of the films was estimated by EDAX studies. Thickness of as- deposited films have been measured by weight difference and interferometric method decreases with increasing Cadmium doping. UV-VISIBLE Optical studies show a high absorption coefficient with direct type of transitions. The energy band gap decreased from 2.81ev to 1.72ev as the doping concentration of Cadmium increases from 0 to 1.