High-Throughput Screening Assisted Discovery of a Stable Layered Anti-Ferromagnetic Semiconductor: CdFeP2Se6

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Abstract

Recent advances in 2D magnetism have heightened interest in layered magnetic materials due to their potential for spintronics. In particular, layered semiconducting antiferromagnets exhibit intriguing low-dimensional semiconducting behavior with both charge and spin as carrier controls. However, synthesis of these compounds is challenging and remains rare. Here, first-principles based high-throughput search is conducted to screen potentially stable mixed metal phosphorous trichalcogenides (MM′P2X6, where M and M′ are transition metals and X is a chalcogenide) that have a wide range of tunable bandgaps and interesting magnetic properties. Among the potential candidates, a stable semiconducting layered magnetic material, CdFeP2Se6, that exhibits a short-range antiferromagnetic order at TN = 21 K with an indirect bandgap of 2.23 eV is successfully synthesized. This work suggests that high-throughput screening assisted synthesis can be an effective method for layered magnetic materials discovery.

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Kothakonda, M., Zhu, Y., Guan, Y., He, J., Kidd, J., Zhang, R., … Sun, J. (2023). High-Throughput Screening Assisted Discovery of a Stable Layered Anti-Ferromagnetic Semiconductor: CdFeP2Se6. Advanced Functional Materials, 33(9). https://doi.org/10.1002/adfm.202210965

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