Abstract
In this work the development of a magnetic metal-base transistor that operates by hole transport is reported. The transistor is constructed using p -type silicon as the collector, Co as the base, and Cu2 O as the emitter. Both base and emitter are deposited using electrochemical procedures. The transistor shows a magnetic-field-dependent current gain and a magnetocurrent of ∼40% observed for a low emitter current value of 2 mA. © 2006 American Institute of Physics.
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CITATION STYLE
Delatorre, R. G., Munford, M. L., Stenger, V., Pasa, A. A., Schwarzacher, W., Meruvia, M. S., & Hümmelgen, I. A. (2006). Electrodeposited p -type magnetic metal-base transistor. Journal of Applied Physics, 99(8). https://doi.org/10.1063/1.2162819
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