Abstract
In this study, the optimization of gas and processing time of atmospheric pressure plasma cleaning was performed for successful ultrasonic direct bonding of electroplated Au flip chip bump. The plasma cleaning conditions strongly affected bondability of the Au flip chip bumps. The plasma cleaning with Ar gas for 1 s effectively removed contaminants from the surface without the surface oxidation, thereby improving the joint strength. © 2008 IOP Publishing Ltd.
Cite
CITATION STYLE
Koo, J. M., Lee, J. B., Moon, Y. J., Moon, W. C., & Jung, S. B. (2008). Atmospheric pressure plasma cleaning of gold flip chip bump for ultrasonic flip chip bonding. Journal of Physics: Conference Series, 100(1). https://doi.org/10.1088/1742-6596/100/1/012034
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