Current understanding of various properties of dislocations in Si is given comprehensively for photovoltaic applications. Dislocations cause spatial variations in the electrical and optical properties of semiconductor materials and also the degradation of various kinds of semiconductor devices. Thus, establishing knowledge on mechanical properties of dislocations and also interactions between dislocations and impurities is important from both the fundamental and practical viewpoints for development of semiconductor technology. Indeed, the knowledge is widely applied as the basis for dislocation-free crystal growth and device fabrication process in Si.
Yonenaga, I. (2019). Defects in crystalline silicon: Dislocations. In Handbook of Photovoltaic Silicon (pp. 541–588). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-662-56472-1_24