BN/BNSiO2 sputtering yield shape profiles under stationary plasma thruster operating conditions

Abstract

Quartz Crystal Microbalance (QCM) is used to measure the volumetric and total sputtering yield of Boron Nitride (BN) and Boron Nitride Silicon Dioxide (BNSiO2) bombarded by Xenon ions in the energy range of 100 eV to 550 eV. Sputtering yield shape profiles are reported at various angles of incidence 0-85° with surface normal and compared with modified Zhang model. The yield shape profile is found to be symmetric at normal incidence and asymmetric at oblique incidence. Both the materials show a sudden jump in the sputtering yield above 500 eV and at an angle of incidence in the range of 45-65°. Erosion of BN at as low as 74 eV ion energy is predicted using generalized Bohdansky model. BNSiO2 show a marginally higher sputtering yield compare to BN.