Main Differences in Processing Si and SiC Devices

Abstract

Due to the different physical properties of Si and SiC, many conventional Si device pro- cessing techniques cannot be directly transferred to SiC device fabrication. To deliver high-performance SiC commercial power devices, new techniques quite different from Si industry were developed in past decades for processing device, such as dopant implan- tation, metal contact, MOS interface, etc. On the other hand, the physics model behind many of these SiC processing technologies is not updated in the same pace that the suc- cess of them can still not be fully understood