Quantized double-layer charging of iron oxide nanoparticles on a-Si:H controlled by charged defects in a-Si:H

Abstract

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film (a-Si:H) is reported. Quantized double-layer charging of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the excess of negative/positive charged defect states in the a-Si:H layer. The particular charge states in a-Si:H are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. © 2007 Wiley-VCH Verlag GmbH & Co. KGaA.