Abstract
High-performance InAlAs/InGaAs HEMTs with a highly uniform threshold voltage are fabricated using an InP-recess-etch stopper. Recess-depth control is improved, and design of the device characteristics is made easier. An SCFL ring oscillator with a propagation delay time of 6.6 ps/gate is achieved with these HEMTs. © 1996 John Wiley & Sons, Inc.
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APA
Enoki, T., Ito, H., Ikuta, K., Umeda, Y., & Ishii, Y. (1996). 0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD. Microwave and Optical Technology Letters, 11(3), 135–139. https://doi.org/10.1002/(SICI)1098-2760(19960220)11:3<135::AID-MOP7>3.0.CO;2-M
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