Illumination-dependent dielectric and impedance spectroscopy analysis of Schottky-type devices with BOD-Z-EN organic semiconductor interface layer

Abstract

This work presents the behavior of adjusting the dielectric and impedance characteristics by varying the voltage and illumination for a metal–organic semiconductor material-semiconductor (MOmS) configuration for optoelectronic applications. We analyzed the ε′, ε′′, tan δ, M′, M′′, σac, Z′, Z′′, θ characteristics of the metal-organic semiconductor–semiconductor diodes at a illumination intensity of 0- 120 mW/cm2, bias voltage range of − 4 V; + 4 V and at 1 MHz. The Cole–Cole plot showed a single semicircle at dark and in the different illumination intensity. The new phenomena that have seemed are the presence of a peak in the ε′′, M′′, and Z′ characteristics. With increasing voltage ‘and illumination intensity, it was discovered that the dielectric constant ε′ and dielectric loss ε′′ increased. The illumination increases from 0 to 120 mW/cm2, increasing the values of ε′ and ε′′ from 3.52 to 3.56 and 0.204 to 0.606, respectively. The BOD-Z-EN organic semiconductor layer exhibited a illumination-dependent electrical relaxation phenomenon, as seen by the M′′-M′ graphs. Consequently, this work examined the dielectric characteristics of the BOD-Z-EN-based photocapacitor structure and came to the conclusion that it could be a good dielectric material. Additionally, the material's high modulus, impedance, and phase angle properties suggest that it may find application in photonic devices. This study highlights that the fabricated Au/BOD-Z-En/n-Si device is a photosensitive capacitor.