Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

Abstract

We investigated the source-to-drain capacitance (Csd) dueto DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channelSNW devices operating at high drain voltages have the positive valueof Csd by DIBL effect. On the other hand, junctionless SNW MOSFETswithout source/drain (S/D) PN junctions have negative or zerovalues by small DIBL effect. By considering the additional source-todraincapacitance component, the accuracy of a small-signal model wassignificantly improved on the imaginary part of Y22-parameter.