An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures

Abstract

Efficient computing in cryogenic environments, including classical von Neumann, quantum, and neuromorphic systems, is poised to transform big data processing. The quest for high-density, energy-efficient memories continues, with cryogenic memory solutions still unclear. We present a Cryogenic Capacitorless Random Access Memory (C2RAM) cell using advanced Si technology, which enhances storage density through its scalability and multistate capability. Remarkably, the C2RAM maintains data for over a decade with its extended retention times and offers potential as an artificial synapse. This positions C2RAM as an ideal nonvolatile memory candidate for cryogenic computing applications and emerging quantum technologies.