Application of positron annihilation technique to front and backend processes for modern LSI devices

Abstract

Developments of the semiconductor industry depend on ability to decrease the size of integrated circuits. Significant efforts to introduce new materials and their fabrication processes have been made in order to achieve such trends. However, one faces difficulties in the control of materials properties caused by atomic scale disorder. In the present paper, we used monoenergetic positrons to characterize ultra shallow junction formed on Si substrates and materials buried in LSI circuit structures. It was shown that the positron annihilation technique is a powerful characterization tool for modern Si-technology related materials.