VHF-PECVD for a-Si:H and a-SiN:H Film Deposition

Abstract

Since 1987, very high frequency (VHF) (30–300 MHz) has been applied to the film deposition process based on theoretical studies on plasma excitation frequency. VHF-plasma enhanced chemical vapor deposition (VHF-PECVD) increases the film deposition rate significantly without deteriorating film quality. Further, the film quality can be controlled via adjustment of the excitation frequency and gas flow rate, which results from the effective dissociation of neutral gases by high-energy electrons. This paper investigates the history of VHF-PECVD for hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiNx:H) film deposition.