Abstract
The surface barrier heights φbn and room-temperature band gaps Eg of Si-doped InxAl1-xAs layers grown by molecular beam epitaxy on n-type (100) oriented InP substrates have been determined as a function of composition with capacitance versus voltage, internal photoemission, photoluminescence, and double-crystal x-ray rocking curve measurements for 0.45 0.78, n-type surfaces might be accumulated and p-type surfaces are likely to be inverted.
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CITATION STYLE
APA
Lin, C. L., Chu, P., Kellner, A. L., Wieder, H. H., & Rezek, E. A. (1986). Composition dependence of Au/InxAl1-xAs Schottky barrier heights. Applied Physics Letters, 49(23), 1593–1595. https://doi.org/10.1063/1.97290
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