Orientation and microstructure design

Abstract

This chapter deals with the integration of CSD functional oxide thin films into semiconductor devices. Thereby, special emphasis is put on the control of the films' orientation and microstructure by means of a defined precursor selection, tailored heating procedures, and the choice of a certain substrate material or the use of crystallization seed layers. The basics which are given in the previous Chaps. 15 and 16 are applied to two technical important functional oxides, the ferroelectric material Pb(Zr,Ti)O3 and the high-k material (Ba,Sr)TiO3. These case studies will exemplarily demonstrate the broad spectrum of control parameters within the CSD processing of complex oxides, even if the choice of the substrate material is limited by the type of application.