Laser interference has been widely used to produce one-dimensional gratings and more recently has shown great potential for two-dimensional patterning. In this study, the authors examine by simulation, its application to in-situ patterning during materials growth. To understand the potential, it is important to study the surface processes resulting from the laser-matter interaction which have a key influence on the resulting growth mechanisms. In this work, the intensity distribution and the laser-semiconductor interaction resulting from four-beam interference patterns are analysed by numerical simulations. In particular, the authors derive the time and spatially dependent thermal distribution along with the thermal-induced desorption and surface diffusion. The results provide a crucial understanding of the light-induced thermal profile and show that the surface temperature and the surface adatom kinetics can be controlled by multi-beam pulsed laser interference patterning due to photothermal reactions. The approach has potential as an in-situ technique for the fast and precise nanostructuring of semiconductor material surfaces.
CITATION STYLE
Wang, Y. R., Jin, C. Y., Ho, C. H., Chen, S., Francis, H., & Hopkinson, M. (2019). Thermodynamic processes on a semiconductor surface during in-situ multi-beam laser interference patterning. In IET Optoelectronics (Vol. 13, pp. 7–11). Institution of Engineering and Technology. https://doi.org/10.1049/iet-opt.2018.5028
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