Abstract
The properties of pure Cu2SnS3 thin films synthesized by direct liquid coating method have been studied for application in TFSCs. The films have band gap of 1.12 eV and an absorption coefficient of ∼10 5 cm-1. They are p-type with electrical conductivity of 0.5 S/cm and show photoconductivity. TFSCs made of these p-CTS films and n-CdS have been analyzed. The maximum efficiency of CTS solar cells is 33% with V OC and ISC of 0.75 V and 40 mA/cm. © 2012 American Institute of Physics.
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Tiwari, D., Chaudhuri, T. K., Shripathi, T., & Deshpande, U. (2012). Cu2SnS3 as a potential absorber for thin film solar cells. In AIP Conference Proceedings (Vol. 1447, pp. 1039–1040). https://doi.org/10.1063/1.4710361
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