Oxygen incorporation during in situ growth of YBCO films on both sides of substrates

Abstract

Oxygen out-diffusion during cooling and heating of in situ grown {ie685-1} (YBCO) films in low oxygen pressure used during growth by pulsed laser deposition was studied in the temperature range 700-450°C using in situ resistance measurements. Results indicate that irrespective of the number of cooling and heating cycles seen by the films, full oxygenation of the films can be realized by the final cooling from the growth temperature in 500 torr oxygen pressure. This result has been successfully used to sequentially grow high quality YBCO films on both sides of LaAlO3 substrates. These films have been used for the fabrication of X-band microstrip resonators with superconducting ground plane. © 1993 Indian Academy of Sciences.