Ostwald ripening during ion beam synthesis - a computer simulation for inhomogeneous systems

Abstract

We present first results of a computer simulation of Ostwald ripening during ion beam synthesis of buried layers. To our knowledge, for the first time a spontaneous evolution of order from a random initial distribution of precipitates has been found. This ordering process leads to a considerable redistribution of material of the precipitates. Substructures in the depth profile of precipitated material, which are found experimentally after annealing of samples, implanted with high doses, could be explained by the ordering process predicted by our computer simulation. © 1994.