A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology

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Abstract

This paper presents a power amplifier that performs well at both 28 GHz and 29 GHz for fifth generation mobile networks (5G) and satellite communications using 0.15-um D-mode GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices. The power amplifier with two-stage common-source (CS) and four-way direct combining architecture attained a small signal gain of 16.1 dB, the output 1-dB compression power (OPldB) of 29.1 dBm, and the power-added efficiency at OPldB of 27% at 28 GHz under 6-V supply voltage. At 29 GHz the small signal gain is 16 dB, the OPldB is 28.6 dBm, and the power-added efficiency at OPldB is 24.6% under 6-V supply voltage.

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APA

Huang, I., Yen, S. T., Chao, W. P., Tsai, J. H., Alshehri, A., Almalki, M., … Huang, T. W. (2019). A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology. In Asia-Pacific Microwave Conference Proceedings, APMC (Vol. 2018-November, pp. 986–988). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.23919/APMC.2018.8617649

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