Development of semipolar (11-22) LEDs on GaN templates

  • Corbett B
  • Quan Z
  • Dinh D
  • et al.
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Abstract

© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.We report on blue and green light-emitting-diodes (LEDs) grown on (11-22)-GaN templates. The templates were created by overgrowth on structured r-plane sapphire substrates. Low defect density, 100 mm diameter GaN templates were obtained by metal organic vapour phase epitaxy (VPE) and hydride VPE techniques. Chemical-mechanical polishing was used to obtain smooth surfaces for the subsequent growth of LED structures. Ohmic contacts to the p-type GaN were obtained despite the lower activated acceptor levels. The LEDs show excellent output power and fast carrier dynamics. Freestanding LEDs have been obtained by use of laser-lift-off. The work is the result of collaboration under the European Union funded ALIGHT project.

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Corbett, B., Quan, Z., Dinh, D. V., Kozlowski, G., O’Mahony, D., Akhter, M., … Lymperakis, L. (2016). Development of semipolar (11-22) LEDs on GaN templates. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX (Vol. 9768, p. 97681G). SPIE. https://doi.org/10.1117/12.2204758

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