Optimizing the Infrared Photoelectric Detection Performance of Pbs Quantum Dots through Solid-State Ligand Exchange

Abstract

Lead sulfide (PbS) quantum dots (QDs) have attracted a great deal of attention in recent decades, due to their value for applications in optoelectronic devices. However, optimizing the performance of optoelectronic devices through ligand engineering has become a major challenge, as the surfactants that surround quantum dots impede the transport of electrons. In this paper, we prepared PbS QD films and photoconductive devices with four different ligands: 1,2-ethylenedithiol (EDT), tetrabutylammonium iodide (TBAI), hexadecyl trimethyl ammonium bromide (CTAB), and sodium sulfide (Na2S). A series of characterization studies confirmed that using the appropriate ligands in the solid-state ligand exchange step for thin film fabrication can significantly improve the responsivity. The devices treated with sodium sulfide showed the best sensitivity and a wider detection from 400 nm to 2300 nm, compared to the other ligand-treated devices. The responsivity of the champion device reached 95.6 mA/W under laser illumination at 980 nm, with an intensity of 50 mW/cm2.