Control and elimination of biaxial strain in laser-ablated epitaxial BaxSr1-xTiO3 films

Abstract

We report the in-plane (a) and out-of-plane (c) lattice parameters of epitaxial laser-ablated Ba0.4Sr0.6TiO3 films on MgO for a range of O2 deposition pressures (40-250 mTorr) near the observed transition from a c. From these lattice parameters, we calculate the residual strain and stress in terms of hydrostatic and biaxial components. Both components increase sharply with O2 pressure between 85 and 100 mTorr, consistent with ion peening effects. Postdeposition annealing decreases the hydrostatic strain, but increases the biaxial tension. For both as-deposited and annealed films, we obtain samples with no biaxial strain (i.e., a=c), within experimental uncertainty. Overall, the strain is a combination of hydrostatic and biaxial components, both of which affect the dielectric response. Therefore, consideration and control of both types of strain is important for the optimum performance of devices such as tunable microwave devices and high-density memories. © 2000 American Institute of Physics.