Three dimensional stress mapping of silicon surrounded by copper filled through silicon vias using polychromator-based multi-wavelength micro Raman spectroscopy

Abstract

Three dimensional (3D) stress distributions in Si, surrounded by copper (Cu) filled through silicon vias (TSVs) with various dimensions and pitches, are non-destructively characterized and stress contour maps generated at different depths using a long focal length, polychromator-based, multi-wavelength micro-Raman spectroscopy system. It was found that stress and crystallinity in Si (in both planar and depth directions) was strongly influenced by the proximity to a TSV, as well as, the dimensions of the TSV. In addition to characterizing semiconductor materials, Multi-wavelength micro-Raman spectroscopy was extremely effective for characterizing process-induced variations in crystalline stress and quality where 3D interconnects and packaging technology is introduced. © 2010 The Japan Society of Applied Physics.