Abstract
Room temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55 µm is reported. A double heterostructure with a 34-pair GainAsP(Xg = 1.4 Am)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40-pm45 device with a 0.88-tam-thick active layer. Threshold current density is as low as 21 kA/cm 2 at room temperature. © 1992 IEEE.
Cite
CITATION STYLE
Tadokoro, T., Okamoto, H., Kohama, Y., Kawakami, T., & Kurokawa, T. (1992). Room Temperature Pulsed Operation of 1.5 µm GaInAsP/InP Vertical-Cavity Surface-Emitting Laser. IEEE Photonics Technology Letters, 4(5), 409–411. https://doi.org/10.1109/68.136468
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
