Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires

Abstract

This research focuses on the impact of native SiO 2 layer evolution, occurring on the surfaces of Si(111) substrates on the morphological and structural properties of self-assisted GaAs nanowires. GaAs nanowires growth were grown on Si(111) substrates, already covered with native SiO 2 developing in different states with identical growth parameters including growth temperature, growth time, and Ga and As flux, using self-assisted VLS process by MBE technique. Results from nanowire samples and substrates were compared to understand the correlation between the changes in appearance of native SiO 2 layer and the changes in the growth pattern of the nanowires.