Deposition of high-k samarium oxide membrane on polysilicon for the extented-gate field-effect transistor (EGFET) applications

Abstract

The paper reports samarium oxide as pH. sensing membrane on polysilicon combined with proper post deposition annealing for the extended-gate field-effect transistor (EGFET) application at the first time. It can be found that the high-k samarium oxide membrane annealed at 700 °C could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Sm2O3 sensing membrane shows great promise for future bio-medical device applications. © 2014 J. New Mat. Electrochem. Systems.