New Insight into the Electronic and Magnetic Properties of Sub-Stoichiometric WO3: A Theoretical Perspective

Abstract

We present a theoretical investigation on the wide-band-gap semiconductor WO (Formula presented.) in its room-temperature monoclinic structure. We carried out density functional theory and GGA-1/2 calculations on the bulk phase and the most stable (001) surface of the material, either in their stoichiometric form or in the presence of oxygen vacancies at various concentrations. Concerning the bulk phase, our results show how the inclusion of these defects correctly reproduces the intrinsic n-type doping of the material. The system is also found to be magnetic at reasonably high defect concentrations. As for the surface, the presence of vacancies gives rise to a magnetic behavior, whose features depend on the relative arrangement of native point defects. Oxygen vacancies are also responsible for additional tungsten oxidation states in both bulk and surface. Based on these results, we provide a rationale for the interpretation of most experimental data of this material and, possibly, other widespread transition metal oxides with similar properties and applications such as ReO (Formula presented.), TiO (Formula presented.), and SnO (Formula presented.).