Quantitative determination of nanoscale electronic properties of semiconductor surfaces by scanning tunnelling spectroscopy

Abstract

Simulation of tunnelling spectra obtained from semiconductor surfaces permits quantitative evaluation of nanoscale electronic properties of the surface. Band offsets associated with quantum wells or quantum dots can thus be evaluated, as can be electronic properties associated with particular point defects within the material. An overview of the methods employed for the analysis is given, emphasizing the critical requirements of both the experiment and theory that must be fulfilled for a realistic determination of electronic properties.