Abstract
Magnetoelectric effect enables controlling magnetism with an electric field or controlling polarization remotely with a magnetic field, without involving any driving electric currents. Since its discovery in the 1960s, the magnetoelectric effect has constantly been inspiring new fundamental science and the development of fascinating device concepts. This perspective is focused on two types of magnetoelectric devices: An ultralow-heat-dissipation spin memory/logic and a magnetoelectric magnetic field sensor. For each device, the paper first overviews the potential market needs, then discusses several key device attributes and outstanding challenges. An outlook for the development of other magnetoelectric devices is also provided.
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CITATION STYLE
Hu, J. M., & Nan, C. W. (2019, August 1). Opportunities and challenges for magnetoelectric devices. APL Materials. American Institute of Physics Inc. https://doi.org/10.1063/1.5112089
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