High-Speed Dicing of SiC Wafers with 0.048 mm Diamond Blades via Rolling-Slitting

Abstract

In this study, an innovative fabrication method called rolling-slitting forming, which forms ultra-thin diamond blades, was presented for the first time. Furthermore, the feasibility of the rolling-slitting forming method when applied to silicon carbide wafer dicing blades was investigated; moreover, the cold-pressing blade samples were manufactured through the conventional process under the same sintering conditions to compare and analyze the manufacturing efficiency, organization and performance. The results show that the new method achieves high-precision and low-thickness dicing blades through continuous production without molds—with the thinnest blades being 0.048 mm thick. Furthermore, the rolling-slitting blade has a unique multiporous heat-conductive matrix structure and in-situ generated amorphous pyrolytic carbon, which can reduce the dicing resistance and contribute to a better cutting quality. In addition, the effects of the dicing parameters on SiC were investigated by using indications of spindle current, dicing chipping size and kerf width during the high dicing process. For a dicing depth of 0.2 mm, the ideal performance of dicing SiC with an ultra-thin blade was achieved at a spindle speed of 22,000 rpm and a feed rate of 5 mm/s. This research provides a new idea for the manufacturing of dicing blades, which can satisfy the demand for ultra-narrow dicing streets of high integration of ICs.