Electron-hole pairs generation rate estimation irradiated by isotope Nickel-63 in silicone using GEANT4

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Abstract

To optimize parameters of beta-electrical converter of isotope Nickel-63 radiation, model of the distribution of EHP generation rate in semiconductor must be derived. By using Monte-Carlo methods in GEANT4 system with ultra-low energy electron physics models this distribution in silicon calculated and approximated with Gauss function. Maximal efficient isotope layer thickness and maximal energy efficiency of EHP generation were estimated.

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Kovalev, I. V., Sidorov, V. G., Zelenkov, P. V., Khoroshko, A. Y., & Lelekov, A. T. (2015). Electron-hole pairs generation rate estimation irradiated by isotope Nickel-63 in silicone using GEANT4. In IOP Conference Series: Materials Science and Engineering (Vol. 94). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/94/1/012024

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