Reaction mechanism studies on atomic layer deposition process of AlF3

Abstract

In this work, the reaction mechanism in the atomic layer deposition (ALD) process of AlF3 thin films is studied with in situ quartz crystal microbalance and quadrupole mass spectrometer. The depositions are done with AlCl3 and TiF4 as precursors. Similar to many metal fluoride films deposited by ALD, the growth rate of the AlF3 is strongly temperature dependent. In addition, at low temperatures, the growth rate is exceptionally high for a traditional ALD process. In this study, the reasons behind these characteristics are studied and a detailed step-by-step mechanism for the AlF3 film growth process is presented.