Growth of Single-crystal Silicon Semiconductor under High Magnetic-field Conditions.

Abstract

Synopsis: Most of the large-scale integrated circuits (LSIs), indispensable at present day, are made from Si wafers grown by Czochralski (CZ) method. The size of LSIs continues to grow with the integra tion of more devices. The diameter of Si crystal has also been increasing to enable the production of large-size LSIs with practical productivity and cost. Generally, a large-diameter crucible is used to produce large single-crystal silicon with practical productivity. However, it is becoming difficult to control the convection of large amounts of silicon melt in large crucibles using the conventional CZ method. Magnetic field-applied CZ (MCZ) is one solution to control the convection of Si melt. There are several kinds of MCZ categorized by magnetic-field direction: horizontal (HMCZ), vertical (VMCZ), Cusp MCZ; and several types of magnets categorized by the magnetic-field generation method (electroconductive and superconductive). In this paper, outlines of CZ produc tion for single-crystal silicon, MCZ equipment and MCZ production are reviewed.