Abstract
Near-field scanning optical microscopy (NSOM) enables nanometer scale studies of optical and opto-electronic properties. A NSOM setup has been designed and constructed to investigated carrier lifetime in the vicinity of extended defects such as grain boundaries and dislocations, as well as surface topography in photovoltaic materials. The benefits of the NSOM technique and the different modes employed are discussed. Some preliminary results are presented. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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CITATION STYLE
Van Dyk, E. E., Karoui, A., La Rosa, A. H., & Rozgonyi, G. (2004). Near-field scanning optical microscopy for characterisation of photovoltaic materials. In Physica Status Solidi C: Conferences (Vol. 1, pp. 2292–2297). https://doi.org/10.1002/pssc.200404848
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