A compact model for the well-depleted 1-T pixel sensor based on silicon-on-insulator technology

Abstract

The silicon-on-I_nsulator (SOI) based one transistor (1-T) pixel sensor is a promising candidate for a high-resolution image sensor and in-sensor computing. In this work, a compact model for the photoresponse of a well-depleted SOI 1-T pixel sensor is proposed from the perspective of the physical process. The model explains the photoelectron accumulation, photoelectron redistribution, and modulation of the transistor according to the electron drift/diffusion mechanism, capacitor-voltage relationship, and current solution from BSIM-IMG. The model agrees well with the experimental results from the 1-T pixel sensor fabricated by the 22 nm fully depleted SOI technology, as well as the simulation results from technology computer-aided design. The extraction scheme of the model parameters is also provided to facilitate the use of the model.