Ultra-low-leakage power-rail ESD clamp circuit in a 65-nm CMOS technology

Abstract

The gate tunneling current impacts seriously on the power-rail ESD clamp circuit, causing a large leakage current through the MOS capacitor used in ESD detection. In this work, a novel technique is implemented to eliminate the gate leakage current through the MOS capacitor by using a couple of transistors to control the voltage drop across the RC delay in the ESD detection circuit. This circuit has been verified in a 65-nm CMOS technology, with a total leakage current of 165nA under 1V bias, at 25°C, and a ESD robustness of 3kV HBM and 200V MM. © 2013 IEEE.