Surface energy band and electron affinity of highly phosphorous-doped epitaxial CVD diamond

Abstract

The surface energy band diagrams and the electron affinity of hydrogen-terminated and oxygen-terminated highly phosphorous-doped single crystal diamond (111) surfaces have been studied by ultraviolet photoelectron spectroscopy, secondary electron spectroscopy, X-ray photoelectron spectroscopy and photoemission electron micro-spectroscopy. A hydrogen-terminated boron-doped diamond (001) surface was used as a, reference of surface energy band diagram. The electron affinity of the H-terminated heavily P-doped diamond was determined to be 0.2 ±0.15 eV, thus close to zero. The electron affinity of the O-terminated highly P-doped diamond was determined to be 0.0 ±0.15 eV, thus can be negative. However, the surface energy bands for the two highly P-doped samples were found to have large amounts (3 eV) of upward bending toward surface. © 2007 The Surface Science Society of Japan.