Raman scattering from vibrational modes in metalorganic molecular beam epitaxy grown carbon doped InP: Spectroscopic search for the carbon donor

Abstract

Vibrational modes of carbon doped InP have been investigated by Raman scattering and cluster-Bethe-lattice calculations. In contrast to other carbon doped III-V semiconductors, the InP samples grown by metalorganic molecular beam epitaxy (MOMBE) show n-type conductivity. Raman spectra from such samples reveal a vibrational mode at 220 cm-1. The frequency of this mode lies in the gap between the acoustic and optical branches of the phonon dispersion (gap mode). Cluster-Bethe-lattice calculations predict such a gap mode only for the carbon donor on the In site and not for the carbon acceptor on the P site.© 1995 American Institute of Physics.