Selective carrier injection into patterned arrays of pyramidal quantum dots for entangled photon light-emitting diodes

Abstract

Scalability and foundry compatibility (as apply to conventional silicon-based integrated computer processors, for example) in developing quantum technologies are major challenges facing current research. Here we introduce a quantum photonic technology that has the potential to enable the large-scale fabrication of semiconductor-based, site-controlled, scalable arrays of electrically driven sources of polarization-entangled photons that may be able to encode quantum information. The design of the sources is based on quantum dots grown in micrometre-sized pyramidal recesses along the crystallographic direction (111)B, which theoretically ensures high symmetry of the quantum dots - a requirement for bright entangled-photon emission. A selective electric injection scheme in these non-planar structures allows a high density of light-emitting diodes to be obtained, with some producing entangled photon pairs that also violate Bell's inequality. Compatibility with semiconductor fabrication technology, good reproducibility and lithographic position control make these devices attractive candidates for integrated photonic circuits for quantum information processing.