Laser Crystallization of Amorphous Silicon via Spot Beam Annealing Method

Abstract

In spot beam laser annealing, fiber laser and the polygon scanner-based optical system play a key role by precisely controlling the laser spot position and linear velocities. Key parameters of the laser crystallization are laser power, spot overlap and line overlap. AFM, Raman, and SEM analyzes are used to evaluate polysilicon crystallization state, optimize process parameters, and understand spot beam annealing mechanism. This paper presents the spot beam annealing system configuration and experimental results for low-temperature poly-silicon fabrication.