Abstract
Selective area growth offers the promise of producing III-nitride photonic crystals (PhCs) without dry etching and concomitant surface damage. Two PhC structures were studied, one comprising an array of flat-topped GaN micropyramids with micrometre-scale periodicity, and the other made up of sharp-tipped pyramids with sub-micrometre periodicity. Angularly resolved reflection and transmission measurements revealed the presence of sharp resonances associated with resonant Bloch modes. As a result, the photonic band structure was determined along symmetry directions of the reciprocal lattice for the two PhC structures. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
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CITATION STYLE
Coquillat, D., Le Vassor D’Yerville, M., Tombet, S. A. B., Liu, C., Bejtka, K., Watson, I. M., … De La Rue, R. M. (2007). Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids. In Physica Status Solidi (C) Current Topics in Solid State Physics (Vol. 4, pp. 95–99). https://doi.org/10.1002/pssc.200673561
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