A versatile computer model is presented for the simulation of several characterization techniques commonly used to determine the electronic properties of silicon wafers and solar cells. Several different sets of empirical data for carrier mobility and carrier recombination in crystalline silicon can be optionally selected to investigate their impact on device performance. The model is applicable to arbitrary carrier injection conditions and compensated doping. It is an advanced tool that permits to predict the outcome of characterization experiments, design new ones, or to perform indepth post-measurement analysis and diagnosis of silicon materials. © 2010 Published by Elsevier Ltd.
Cuevas, A. (2011). Modelling silicon characterisation. In Energy Procedia (Vol. 8, pp. 94–99). Elsevier Ltd. https://doi.org/10.1016/j.egypro.2011.06.108