Advances in Modeling and Suppression Methods of EMI in Power Electronic Converters of Third-Generation Semiconductor Devices

Abstract

With the development of high-frequency, miniaturized, and lightweight power electronic devices, third-generation semiconductor devices are more and more used in the main circuits of power electronic converters. The electromagnetic interference (EMI) generated by their fast switching can affect the performance of power electronic converters. Therefore, it is necessary to investigate the modeling and suppression methods of conducted noise in power electronic converters of third-generation semiconductor devices. This paper describes the EMI sources and coupling paths of EMI in third-generation semiconductor devices used in power electronic converters. The modeling methods of EMI are summarized from the perspectives of power devices and coupling paths. The suppression methods of conducted noise are summarized by suppressing EMI sources and improving coupling path characteristics. This paper provides a reference for the electromagnetic compatibility design of power electronic converters for third-generation semiconductor devices.