A multidiode simulation determines the absolute solar cell efficiency gain due to gettering. The simulation predicts current/voltage characteristics of lateral inhomogeneous industrial solar cells from luminescence images measured before and after gettering or any other processing step. Improved lifetime distributions lead to a predicted increase in solar cell efficiency Δηabs= +0.46 % for a POCl3diffusion on multicrystalline silicon wafers. The simulative approach determines the gettering efficiency of any process step on any wafer material without preselection.
Stoicescu, L., Reuter, M., & Werner, J. H. (2012). Absolute quantification of gettering efficiency from luminescence images. In Energy Procedia (Vol. 27, pp. 129–134). Elsevier Ltd. https://doi.org/10.1016/j.egypro.2012.07.040