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Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

IOP Conference Series: Materials Science and Engineering (2009) 6
DOI: 10.1088/1757-899X/6/1/012009
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Abstract

We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots. © 2009 IOP Publishing Ltd.

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Bietti, S., Sanguinetti, S., Somaschini, C., Koguchi, N., Isella, G., Chrastina, D., & Fedorov, A. (2009). Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate. In IOP Conference Series: Materials Science and Engineering (Vol. 6). https://doi.org/10.1088/1757-899X/6/1/012009

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